Inchange Semiconductor Product Specification 2SC867 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・High collector-base breakdown voltage :VCBO=400V(min) APPLICATIONS ・For high voltage and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol 导体 半 电 固 Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage CONDITIONS IC M E ES G N A CH IN OND Open emitter Open base Open collector R O T UC VALUE UNIT 400 V 150 V 5 V IC Collector current 1 A ICM Collector current-peak 2 A PD Total power dissipation 23 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC867 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2 A 1.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.2 A 1.5 V ICBO Collector cut-off current VCB=400V;IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=0.1A ; VCE=3V Transition frequency IC=0.2A ; VCE=10V fT CONDITIONS 体 半导 固电 MIN N A H INC 2 MAX R O T UC D N O IC M E S GE TYP. UNIT 50 8 MHz Inchange Semiconductor Product Specification 2SC867 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions 3