Inchange Semiconductor Product Specification 2SD437 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3 package ・High voltage ・Fast switching speed APPLICATIONS ・For switching regulator and power amplifier applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 350 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 10 A ICM Collector current-peak 15 A PT Total power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD437 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 350 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 6 V VCEsat-1 Collector-emitter saturation voltage IC=5 A;IB=1 A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=8 A;IB=2.5 A 3.0 V VBEsat-1 Base-emitter saturation voltage IC=5 A;IB=1 A 1.4 V VBEsat-2 Base-emitter saturation voltage IC=8 A;IB=2.5 A 1.8 V ICBO Collector cut-off current VCB=600V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 15 hFE-2 DC current gain IC=6A ; VCE=5V 10 2 MIN TYP. MAX 50 UNIT Inchange Semiconductor Product Specification 2SD437 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3