ISC 2SC3058A

Inchange Semiconductor
Product Specification
2SC3058A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For switching regulator and DC/DC
converter applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
600
V
VCEO
Collector-emitter voltage
Open base
450
V
VEBO
Emitter-base voltage
Open collector
7
V
30
A
200
W
IC
Collector current
PT
Total power dissipation
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.0
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
Thermal resistance from junction to mounting base
Inchange Semiconductor
Product Specification
2SC3058A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ; IB=0
450
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
600
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
7
V
VCE(sat)
Collector-emitter saturation voltage
IC=20A; IB=4A
1.0
V
VBE(sat)
Base-emitter saturation voltage
IC=20A; IB=4A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
15
50
hFE-2
DC current gain
IC=20A ; VCE=5V
10
40
Transition frequency
IC=4A ; VCE=10V
30
MHz
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
420
pF
fT
COB
CONDITIONS
2
MIN
TYP.
MAX
UNIT
Inchange Semiconductor
Product Specification
2SC3058A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3