Inchange Semiconductor Product Specification 2SC2834 2SC2834A Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High speed switching ・High VCBO ・Low collector saturation voltage APPLICATIONS ・For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 体 导 半 Absolute maximum ratings (Ta=25℃) 固电 SYMBOL VCBO VCEO EM S E NG PARAMETER A H C IN 2SC2834 Collector-base voltage D N O IC R O T UC CONDITIONS VALUE 800 Open emitter 2SC3834A Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector IC UNIT V 900 500 V 8 V Collector current (DC) 7 A ICM Collector current-peak 15 A IB Base current (DC) 4 A PC Collector power dissipation Ta=25℃ 2.5 TC=25℃ 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC2834 2SC2834A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;L=25mH VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V 0.1 mA 0.1 mA 2SC2834 ICBO CONDITIONS VEB=5V; IC=0 hFE-1 DC current gain IC=0.1A ; VCE=5V hFE-2 DC current gain 固电 IC=5A ; VCE=5V EM S E NG Transition frequency A H C IN Switching times 2SC2834 15 8 3.5 MHz 1.0 μs Turn-on time 1.2 IC=5.0A; VCC=200V IB1=1A ,IB2=-1A Storage time 2SC2834 tf V R O T UC D N O IC IC=0.5A ; VCE=10V;f=1MHz 2SC2834A ts 500 UNIT VCB=900V; IE=0 Emitter cut-off current 体 导 半 MAX VCB=800V; IE=0 IEBO ton TYP. Collector cut-off current 2SC3834A fT MIN 2.5 μs 1.0 μs Fall time 1.2 2SC2834A 2 Inchange Semiconductor Product Specification 2SC2834 2SC2834A Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3