Inchange Semiconductor Product Specification 2SC3210 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Low collector saturation voltage ・High breakdown voltage APPLICATIONS ・For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter 体 导 半 Absolute maximum ratings(Ta=25℃) 固电 SYMBOL OND VALUE UNIT 500 V 400 V 7 V Collector current 10 A ICM Collector current-peak 20 A IB Base current 5 A PC Collector power dissipation VCBO VCEO VEBO IC PARAMETER R O T UC CONDITIONS C I M E Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector S E NG A H C IN TC=25℃ 100 Ta=25℃ 3 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3210 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A;L=25mH VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=5A ; VCE=5V 8 fT 固电 Switching times ton tstg tf 体 导 半 Transition frequency Turn-on time IC=0.5A ; VCE=10V EM S E NG A H C IN Storage time CONDITIONS 2 TYP. MAX 400 UNIT V R O T UC D N O IC IC=5A; VCC=100V IB1=-IB2=1A Fall time MIN 11 MHz 1.0 μs 2.5 μs 1.0 μs Inchange Semiconductor Product Specification 2SC3210 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3