ISC 2SC3210

Inchange Semiconductor
Product Specification
2SC3210
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3PFa package
・Low collector saturation voltage
・High breakdown voltage
APPLICATIONS
・For high speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
体
导
半
Absolute maximum ratings(Ta=25℃)
固电
SYMBOL
OND
VALUE
UNIT
500
V
400
V
7
V
Collector current
10
A
ICM
Collector current-peak
20
A
IB
Base current
5
A
PC
Collector power dissipation
VCBO
VCEO
VEBO
IC
PARAMETER
R
O
T
UC
CONDITIONS
C
I
M
E
Collector-base voltage
Open emitter
Collector-emitter voltage
Open base
Emitter-base voltage
Open collector
S
E
NG
A
H
C
IN
TC=25℃
100
Ta=25℃
3
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC3210
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A;L=25mH
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
15
hFE-2
DC current gain
IC=5A ; VCE=5V
8
fT
固电
Switching times
ton
tstg
tf
体
导
半
Transition frequency
Turn-on time
IC=0.5A ; VCE=10V
EM
S
E
NG
A
H
C
IN
Storage time
CONDITIONS
2
TYP.
MAX
400
UNIT
V
R
O
T
UC
D
N
O
IC
IC=5A; VCC=100V
IB1=-IB2=1A
Fall time
MIN
11
MHz
1.0
μs
2.5
μs
1.0
μs
Inchange Semiconductor
Product Specification
2SC3210
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
R
O
T
UC
D
N
O
IC
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3