SavantIC Semiconductor Product Specification 2SC2834 2SC2834A Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High speed switching ·High VCBO ·Low collector saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SC2834 VCBO Collector-base voltage VALUE UNIT 800 Open emitter 2SC3834A V 900 VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 8 V IC Collector current (DC) 7 A ICM Collector current-peak 15 A IB Base current (DC) 4 A PC Collector power dissipation Ta=25 2.5 TC=25 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC2834 2SC2834A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;L=25mH VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V 0.1 mA 0.1 mA 2SC2834 ICBO Collector cut-off current 2SC3834A CONDITIONS MIN MAX 500 UNIT V VCB=800V; IE=0 VCB=900V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=5A ; VCE=5V 8 Transition frequency IC=0.5A ; VCE=10V;f=1MHz fT TYP. 3.5 MHz Switching times 2SC2834 ton 1.0 Turn-on time µs 2SC2834A ts 1.2 IC=5.0A; VCC=200V IB1=1A ,IB2=-1A Storage time 2SC2834 tf 2.5 µs 1.0 Fall time µs 2SC2834A 1.2 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2834 2SC2834A PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3