Inchange Semiconductor Product Specification 2SC2831 2SC2831A Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·High VCBO ·High speed switching APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base Emitter 3 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SC2831 VCBO Collector-base voltage VALUE UNIT 800 Open emitter 2SC2831A V 900 VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector 500 V 8 V 1.5 A 3 A 0.5 A 25 W IC Collector current ICM Collector current-peak IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2831 2SC2831A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; L=25mH VCE(sat) Collector-emitter saturation voltage IC=1A; IB=0.2A 1.0 V VBE(sat) Base-emitter saturation voltage IC=1A; IB=0.2A 1.5 V 100 μA 100 μA ICBO Collector cut-off current 2SC2831 2SC2831A CONDITIONS MIN MAX 500 UNIT V VCB=800V;IE=0 VCB=900V;IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=1A ; VCE=5V 8 Transition frequency IC=0.2A ; VCE=10V fT TYP. 2.5 MHz Switching times ton tstg 2SC2831 1.0 2SC2831A 1.2 μs Turn-on time IC=1A ; IB1=-IB2=-0.2A VCC=200V Storage time 2SC2831 tf 3.0 μs 1.0 μs Fall time 1.2 2SC2831A 2 Inchange Semiconductor Product Specification 2SC2831 2SC2831A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3