Inchange Semiconductor Product Specification 2SC3886A Silicon NPN Power Transistors · DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed APPLICATIONS ·Horizontal deflection output for high resolution display ·High speed switching regulator output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A ICM Collector current-peak 15 A IB Base current 4 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3886A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.5A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.5A 1.5 V ICBO Collector cut-off current VCB=1500V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=1A ; VCE=5V 8 15 Transition frequency IC=0.1A ; VCE=10V 1 3 MHz Collector output capacitance IE=0 ; VCB=10V;f=1MHz 210 pF fT COB ts Storage time tf Fall time CONDITIONS Resistive load ICP=6A ;IB1=-IB2=1.2A RL=33.3Ω 2 MIN TYP. MAX 600 UNIT V 2.5 μs 0.15 μs Inchange Semiconductor Product Specification 2SC3886A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3