Inchange Semiconductor Product Specification 2SC5143 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV ·High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1700 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A ICM Collector current-Peak 20 A IB Base current 5 A PT Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC5143 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS Emitter-base breakdown voltage IE=400mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=6A; IB=1.5A VBEsat Base-emitter saturation voltage IC=6A ;IB=1.5A ICBO Collector cut-off current VCB=1700V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain hFE-2 MIN TYP. MAX 5 UNIT V 3.0 V 1.2 V 1 mA 83 250 mA IC=1A ; VCE=5V 8 25 DC current gain IC=6A ; VCE=5V 4 8.5 Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz VF Diode forward voltage IF=6A fT Transition frequency IE=0.1A ; VCE=10V 0.9 185 pF 1.8 2 V MHz Switching times (inductive load) ts Storage time tf Fall time ICP=5A;IB1(end) =1A fH=31.5kHz 2 4 6 μs 0.2 0.5 μs Inchange Semiconductor Product Specification 2SC5143 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 Inchange Semiconductor Product Specification 2SC5143 Silicon NPN Power Transistors 4