isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4294 DESCRIPTION ·High Breakdown Voltage: V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s i . w w w VALUE UNIT 1500 V 800 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICP Collector Current-Peak 16 A Collector Power Dissipation @ Ta=25℃ 3.0 PC TJ Tstg n c . i m e W Collector Power Dissipation @ TC=25℃ 50 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4294 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.2A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA ICES Collector Cutoff Current VCE= 1500V; RBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 130 mA hFE-1 DC current gain hFE-2 DC current gain VECF C-E Diode Forward Voltage Switching times tstg tf CONDITIONS B n c . i m e s c s .i 8 IC= 5A; VCE= 5V 4 Storage Time MAX UNIT V 6 2.0 V 3.0 μs 0.3 μs IC= 5A, IB1= 1A; IB2= -2A; VCC= 200V Fall Time isc Website：www.iscsemi.cn 40 IC= 1A; VCE= 5V IF= 6A TYP. 800 B ww w MIN 2