isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2508DF DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current- Continuous 4 A IBM Base Current-Peak 6 A PC Collector Power Dissipation @ TC=25℃ 45 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.8 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2508DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.12A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 1.7A 1.1 V ICES Collector Cutoff Current VCE= 1500V ; VBE= 0 VCE= 1500V ; VBE= 0; TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 7.5V ; IC= 0 227 hFE-1 DC Current Gain IC= 1A ; VCE= 5V 13 hFE-2 DC Current Gain IC= 4.5A ; VCE= 1V VECF C-E Diode Forward Voltage IF= 4.5A COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 4 mA 7 2.0 80 V pF Switching times tstg tf Storage Time 6.0 μs 0.6 μs IC= 4.5A , IB(end)= 1.1A; LB= 6μH -VBB= 4V; (-dIB/dt= 0.6A/μs) Fall Time isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Website：www.iscsemi.cn isc Product Specification BU2508DF