isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD904 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·Low Collector Saturation Voltage: VCE(sat)= 5.0V(Max.)@ IC= 3A ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 7 A ICM Collector Current- Peak 10 A Collector Power Dissipation @ Ta= 25℃ 3 W PC TJ Tstg Collector Power Dissipation @ TC= 25℃ 50 Junction Temperature 150 ℃ -40~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD904 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 35mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.6 V ICES Collector Cutoff Current VCB= 1500V; VBE= 0 1.0 mA IEBO Collector Cutoff Current VEB= 4V; IC= 0 44 100 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 8 hFE-2 DC Current Gain IC= 4A; VCE= 5V 5 VECF C-E Diode Forward Voltage IF= 4A isc Website：www.iscsemi.cn CONDITIONS MIN TYP. MAX 600 V 6 V B B 10 2.0 2 UNIT V