isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4438 DESCRIPTION ·High Breakdown Voltage: V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICP Collector Current-Peak 16 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4438 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.2A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA ICES Collector Cutoff Current VCE= 1500V; RBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1.0 mA hFE-1 DC current gain IC= 1A; VCE= 5V 8 hFE-2 DC current gain IC= 5A; VCE= 5V 4 800 B B UNIT V 6 Switching times tstg Storage Time 3.0 μs 0.3 μs IC= 5A , IB1= 1A; IB2= -2A; VCC= 200V tf Fall Time isc Website：www.iscsemi.cn 2