Inchange Semiconductor Product Specification 2SD1088 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For switching igniter applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 5 V IC Collector current-continuous 6 A ICM Collector current-peak 10 A IB Base current 1 A PD Total power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1088 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A ;L=40mH VCEsat Collector-emitter saturation voltage IC=4A;IB=0.04A 2.0 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.04A 2.5 V ICBO Collector cut-off current VCB=300V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.5 mA hFE-1 DC current gain IC=2A ; VCE=2V 2000 hFE-2 DC current gain IC=4A ; VCE=2V 200 COB Collector output capacitance f=1MHz;VCB=50V 2 MIN TYP. MAX 250 UNIT V 35 pF Inchange Semiconductor Product Specification 2SD1088 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SD1088 Silicon NPN Power Transistors 4 Inchange Semiconductor Product Specification 2SD1088 Silicon NPN Power Transistors 5