ISC 2SC4350

Inchange Semiconductor
Product Specification
2SC4350
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・High DC current gain
・DARLINGTON
APPLICATIONS
・For high speed power switching
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-220) and symbol
体
导
半
固电
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
EM
S
E
NG
PARAMETER
A
H
C
IN
D
N
O
IC
R
O
T
UC
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
100
V
Collector-emitter voltage
Open base
100
V
Emitter-base voltage
Open collector
7
V
IC
Collector current
10
A
IB
Base current
0.5
A
PC
Collector power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC4350
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
100
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0;
100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=5mA; IC=0;
7
V
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=5mA
1.5
V
VBEsat
Base-emitter saturation voltage
IC=5A; IB=5mA
2.0
V
ICBO
Collector cut-off current
VCB=100V ;IE=0
1
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
5.0
mA
hFE
DC current gain
IC=5A ; VCE=2V
‹
体
导
半
固电
hFE classifications
M
CONDITIONS
EM
S
E
NG
L
K
A
H
C
IN
2000-5000
4000-10000
8000-20000
2
MIN
TYP.
MAX
R
O
T
UC
2000
D
N
O
IC
20000
UNIT
Inchange Semiconductor
Product Specification
2SC4350
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
R
O
T
UC
D
N
O
IC
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3