Inchange Semiconductor Product Specification 2SC4350 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON APPLICATIONS ・For high speed power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol 体 导 半 固电 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER A H C IN D N O IC R O T UC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 100 V Collector-emitter voltage Open base 100 V Emitter-base voltage Open collector 7 V IC Collector current 10 A IB Base current 0.5 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC4350 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0; 100 V V(BR)EBO Emitter-base breakdown voltage IE=5mA; IC=0; 7 V VCEsat Collector-emitter saturation voltage IC=5A; IB=5mA 1.5 V VBEsat Base-emitter saturation voltage IC=5A; IB=5mA 2.0 V ICBO Collector cut-off current VCB=100V ;IE=0 1 μA IEBO Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE DC current gain IC=5A ; VCE=2V 体 导 半 固电 hFE classifications M CONDITIONS EM S E NG L K A H C IN 2000-5000 4000-10000 8000-20000 2 MIN TYP. MAX R O T UC 2000 D N O IC 20000 UNIT Inchange Semiconductor Product Specification 2SC4350 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3