Inchange Semiconductor Product Specification 2SA1308 Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Low collector saturation voltage APPLICATIONS ·High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -5 A ICM Collector current-peak -8 A PC Collector dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA1308 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=-3A;IB=-0.15A -0.4 V VBEsat Base-emitter saturation voltage IC=-3A;IB=-0.15A -1.2 V ICBO Collector cut-off current VCB=-100V;IE=0 -1 μA IEBO Emitter cut-off current VEB=-7V; IC=0 -1 μA hFE-1 DC current gain IC=-1A ; VCE=-1V 70 hFE-2 DC current gain IC=-3A ; VCE=-1V 30 fT Transition frequency IC=-1A ; VCE=-4V 60 MHz COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 200 pF B 2 MIN TYP. MAX -100 UNIT V 240 Inchange Semiconductor Product Specification 2SA1308 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3