Inchange Semiconductor Product Specification 2SD2488 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・DARLINGTON ・High DC current gain APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A IB Base current 1 A PC Collector power dissipation 130 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD2488 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=10A ;IB=10mA 2.5 V VBEsat Base-emitter saturation voltage IC=10A ;IB=10mA 3.0 V ICBO Collector cut-off current VCB=200V IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=10A ; VCE=4V Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 120 pF fT Transition frequency IE=-2A ; VCE=12V 70 MHz CONDITIONS hFE Classifications O P Y 5000-12000 6500-20000 15000-30000 2 MIN TYP. MAX 200 UNIT V 5000 30000 Inchange Semiconductor Product Specification 2SD2488 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3