Inchange Semiconductor Product Specification 2SD1263 2SD1263A Silicon NPN Power Transistors · DESCRIPTION ·With TO-220Fa package ·High breakdown voltalge APPLICATIONS ·For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SD1263 VCBO Collector-base voltage 250 Open base 2SD1263A VEBO Emitter-base voltage V 400 2SD1263 Collector-emitter voltage UNIT 350 Open emitter 2SD1263A VCEO VALUE V 300 Open collector 5 V IC Collector current 0.75 A ICM Collector current-peak 1.5 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 35 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1263 2SD1263A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat PARAMETER Collector-emitter voltage CONDITIONS 2SD1263 MIN TYP. MAX UNIT 250 IC=30mA ,IB=0 V 300 2SD1263A Collector-emitter saturation voltage IC=1A, IB=0.2A 1.0 V VBE Base-emitter voltage IC=1A ; VCE=10V 1.5 V IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA Collector cut-off current 2SD1263 VCE=150V; IB=0 1.0 mA ICEO 2SD1263A VCE=200V; IB=0 1.0 mA 2SD1263 VCE=350V; VBE=0 1.0 mA 2SD1263A VCE=400V; VBE=0 1.0 mA ICES Collector cut-off current hFE-1 DC current gain IC=0.3A ; VCE=10V 70 hFE-2 DC current gain IC=1A ; VCE=10V 10 Transition frequency IC=0.5A; VCE=5V,f=10MHz fT 250 30 MHz 0.5 μs 2 μs 0.5 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=1A;IB1=-IB2=0.1A VCC=50V hFE-1 Classifications Q P 70-150 120-250 2 Inchange Semiconductor Product Specification 2SD1263 2SD1263A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 Inchange Semiconductor Product Specification 2SD1263 2SD1263A Silicon NPN Power Transistors 4