Inchange Semiconductor Product Specification 2SB1605 2SB1605A Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Low collector saturation voltage ・Good linearity of hFE APPLICATIONS ・For low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SB1605 VCBO Collector-base voltage -60 Open base 2SB1605A VEBO Emitter-base voltage V -80 2SB1605 Collector-emitter voltage UNIT -60 Open emitter 2SB1605A VCEO MAX V -80 Open collector -5 V IC Collector current -3 A ICM Collector current-peak -5 A PC Collector dissipation Ta=25℃ 2 TC=25℃ 35 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1605 2SB1605A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SB1605 MIN TYP. MAX UNIT -60 IC=-30mA ;IB=0 2SB1605A V -80 Collector-emitter saturation voltage IC=-3A ;IB=-0.375A -1.2 V VBE Base-emitter on voltage IC=-3A ; VCE=-4V -1.8 V ICES Collector cut-off current -200 μA -300 μA -1 mA ICEO Collector cut-off current 2SB1605 VCE=-60V; VBE=0 2SB1605A VCE=-80V; VBE=0 2SB1605 VCE=-30V; IB=0 2SB1605A VCE=-60V; IB=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-1A ; VCE=-4V 70 hFE-2 DC current gain IC=-3A ; VCE=-4V 10 Transition frequency IC=-0.5A ; VCE=-10V fT 250 30 MHz 0.5 μs 1.2 μs 0.3 μs Switching times ton Turn-on time tstg Storage time tf IC=-1A; IB1=-IB2=-0.1A Fall time hFE-1 Classifications Q P 70-150 120-250 2 Inchange Semiconductor Product Specification 2SB1605 2SB1605A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SB1605 2SB1605A Silicon PNP Power Transistors 4