Inchange Semiconductor Product Specification 2SD1267 2SD1267A Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage ・Complement to type 2SB942/942A APPLICATIONS ・For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol 体 导 半 固电 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO INC PARAMETER E SEM G N A H Collector-base voltage R O T UC D N O IC CONDITIONS 2SD1267 Emitter-base voltage V 80 2SD1267 60 Open base 2SD1267A VEBO UNIT 60 Open emitter 2SD1267A Collector-emitter voltage VALUE V 80 Open collector 5 V IC Collector current 4 A ICM Collector current-peak 8 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1267 2SD1267A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD1267 VCEO Collector-emitter voltage TYP. MAX UNIT 60 IC=30mA ,IB=0 2SD1267A VCEsat MIN V 80 Collector-emitter saturation voltage IC=4A, IB=0.4A 1.5 V VBE Base-emitter voltage IC=3A ; VCE=4V 2.0 V IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA ICEO Collector cut-off current 0.7 mA 0.4 mA ICES hFE-2 2SD1267A VCE=60V; IB=0 2SD1267 VCE=60V; VBE=0 2SD1267A VCE=80V; VBE=0 体 导 半 DC current gain 固电 Transition frequency E SEM IC=0.5A; VCE=5V,f=1MHz Turn-on time tstg Storage time tf IC=4A;IB1=-IB2=0.4A VCC=50V Fall time hFE-1 Classifications Q P 70-150 120-250 2 R O T UC 70 D N O IC IC=3A ; VCE=4V G N A CH IN ton IC=1A ; VCE=4V DC current gain Switching times VCE=30V; IB=0 Collector cut-off current hFE-1 fT 2SD1267 250 15 20 MHz 0.4 μs 1.5 μs 0.5 μs Inchange Semiconductor Product Specification 2SD1267 2SD1267A Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 R O T UC Inchange Semiconductor Product Specification 2SD1267 2SD1267A Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC