Inchange Semiconductor Product Specification 2SD1276 2SD1276A Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB950/950A ・High DC current gain ・High-speed switching APPLICATIONS ・For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol 体 导 半 Absolute maximum ratings (Ta=25℃) 固电 SYMBOL VCBO VCEO EM S E NG PARAMETER A H C IN 2SD1276 Collector-base voltage D N O IC CONDITIONS 2SD1276A 2SD1276 IC UNIT 60 V 80 60 Open base 2SD1276A Emitter-base voltage VALUE Open emitter Collector-emitter voltage VEBO R O T UC V 80 Open collector 5 V Collector current (DC) 4 A ICM Collector current-Peak 8 A PC Collector power dissipation TC=25℃ 40 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1276 2SD1276A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SD1276 MIN TYP. MAX UNIT 60 IC=30mA , IB=0 V 80 2SD1276A VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=12mA 2 V VCEsat- Collector-emitter saturation voltage IC=5A ;IB=20mA 4 V VBE Base-emitter voltage VCE=3V; IC=3A 2.5 V ICBO Collector cut-off current 0.2 mA 0.5 mA Collector cut-off current ICEO IEBO hFE-2 固电 fT 2SD1276A VCB=80V; IE=0 2SD1276 VCE=30V; IB=0 2SD1276A VCE=40V; IB=0 VEB=5V; IC=0 R O T UC IC=3A ; VCE=0.5V 1000 DC current gain IC=3A ; VCE=3V 2000 INC IC=0.5A; VCE=10V;f=1MHz EM S E G N A H Transition frequency ton Turn-on time ts Storage time tf Fall time IC=2A ;IB1=8mA IB2=-8mA;VCC=50V hFE-2 Classifications Q R 2000-5000 4000-10000 2 2 D N O IC DC current gain Switching times VCB=60V ;IE=0 体 导 半 Emitter cut-off current hFE-1 2SD1276 mA 10000 20 MHz 0.5 μs 4 μs 1 μs Inchange Semiconductor Product Specification 2SD1276 2SD1276A Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3