Inchange Semiconductor Product Specification 2SD2395 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·Wide SOA (safe operating area) ·Complement to type 2SB1566 PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 5 V 3 A 4.5 A IC Collector current ICM Collector current-peak PC Collector dissipation Ta=25℃ 2 W TC=25℃ 25 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD2395 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0 50 V V(BR)CBO Collector-base breakdown voltage IC=50μA ;IE=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=50μA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.2A 1.5 V ICBO Collector cut-off current VCB=40V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 μA hFE DC current gain IC=0.5A ; VCE=5V COB Output capacitance IE=0 ; VCB=10V;f=1MHz 35 pF fT Transition frequency IC=0.5A ; VCE=5V;f=30MHz 100 MHz CONDITIONS hFE Classifications E F 100-200 160-320 2 MIN TYP. 100 MAX UNIT 320 Inchange Semiconductor Product Specification 2SD2395 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3