Inchange Semiconductor Product Specification 2SB1187 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1761 ・Excellent DC current gain characteristics ・Wide safe operating area APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base 导体 半 电 固 D N O IC Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO M E S GE PARAMETER R O T UC VALUE UNIT Open emitter -80 V Collector-emitter voltage Open base -60 V Emitter-base voltage Open collector -5 V N A H INC Collector-base voltage CONDITIONS IC Collector current (DC) -3 A ICM Collector current-Peak -6 A PC TC=25℃ 30 Ta=25℃ 2 W Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1187 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA , IB=0 -60 V V(BR)CBO Collector-base breakdown voltage IC=-50μA , IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA , IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -1.0 V VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-60V ;IE=0 -10 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -10 μA hFE DC current gain IC=-0.5A ; VCE=-5V Transition frequency IC=-0.5A ; VCE=-5V Output capacitance IE=0 ; VCB=-10V ,f=1MHz fT Cob 导体 半 电 CONDITIONS 固 IN 2 TYP. 60 MAX UNIT 320 TOR 12 MHz 100 pF C U D ON IC M E ES G N A CH MIN Inchange Semiconductor Product Specification 2SB1187 Silicon Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3