SavantIC Semiconductor Product Specification 2SB1569 Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·High DC current gain ·Low collector saturation voltage ·Wide area of safe operation ·Complement to type 2SD2400 PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -1.5 A ICM Collector current-peak -3.0 A PC Collector dissipation Ta=25 2 TC=25 20 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1569 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;IB=0 -120 V V(BR)CBO Collector-base breakdown voltage IC=-50µA ;IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-50µA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-0.1A -2.0 V VBEsat Base-emitter saturation voltage IC=-1A ;IB=-0.1A -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -1.0 µA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 µA hFE DC current gain IC=-1A ; VCE=-5V COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 30 pF fT Transition frequency IE=0.1A ; VCE=-5V,f=30MHz 50 MHz hFE Classifications D E F 60-120 100-200 160-320 2 MIN TYP. 60 MAX UNIT 320 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB1569