ISC 2SD1762

Inchange Semiconductor
Product Specification
2SD1762
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・Low collector saturation voltage
・Complement to type 2SB1185
APPLICATIONS
・For low frequency power
amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
50
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current (DC)
3
A
ICM
Collector current-Peak
4.5
A
PC
Collector power dissipation
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD1762
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA , IB=0
50
V
V(BR)CBO
Collector-base breakdown voltage
IC=50μA , IE=0
60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=50μA , IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=0.2A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.2A
1.5
V
ICBO
Collector cut-off current
VCB=40V IE=0
1
μA
IEBO
Emitter cut-off current
VEB=4V; IC=0
1
μA
hFE
DC current gain
IC=0.5A ; VCE=3V
fT
Transition frequency
IE=-0.5A ; VCE=5V;f=30MHz
90
MHz
Cob
Output capacitance
IE=0 ; VCB=10V ,f=1MHz
40
pF
‹
CONDITIONS
hFE Classifications
D
E
F
60-120
100-200
160-320
2
MIN
TYP.
60
MAX
UNIT
320
Inchange Semiconductor
Product Specification
2SD1762
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3