ISC 2SD686

Inchange Semiconductor
Product Specification
2SD686
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SB676
・DARLINGTON
・High DC current gain
APPLICATIONS
・Switching applications
・Hammer drive,pulse motor drive
・Power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
PARAMETER
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
5
V
4
A
30
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-50~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD686
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=6mA
1.5
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=6mA
2.0
V
ICBO
Collector cut-off current
VCB=100V; IE=0
20
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
2.5
mA
hFE-1
DC current gain
IC=1A ; VCE=2V
2000
hFE-2
DC current gain
IC=3A ; VCE=2V
1000
80
UNIT
V
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Switching times
ton
ts
tf
Turn-on time
Storage time
IB1=-IB2=6mA
VCC=30V;RL=10Ω
Fall time
2
0.2
μs
1.5
μs
0.6
μs
Inchange Semiconductor
Product Specification
2SD686
Silicon NPN Power Transistors
PACKAGE OUTLINE
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3