Inchange Semiconductor Product Specification 2SB1381 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2079 ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -5 A ICM Collector current-peak -8 A IB Base current -0.5 A PC Collector dissipation Ta=25℃ 2 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1381 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-2.5A; IB=-5mA -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-5A; IB=-20mA -3.0 V Base-emitter saturation voltage IC=-2.5A; IB=-5mA -2.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -2.5 mA hFE-1 DC current gain IC=-2.5A ; VCE=-3V 1500 hFE-2 DC current gain IC=-7A ; VCE=-3V 500 VBEsat CONDITIONS MIN TYP. MAX -100 UNIT V 15000 Switching times ton Turn-on time ts Storage time tf Fall time IB1=-IB2=-5mA VCC=-25V ,RL=10Ω 2 0.8 μs 2.5 μs 2.0 μs Inchange Semiconductor Product Specification 2SB1381 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3