SavantIC Semiconductor Product Specification 2SD633 2SD635 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB673/675 ·DARLINGTON ·High DC current gain ·Low saturation voltage APPLICATIONS ·High power switching ·Hammer drive,pulse motor drive PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SD633 VCBO Collector-base voltage 100 Emitter-base voltage V Open base 60 2SD635 VEBO V 60 2SD633 Collector-emitter voltage UNIT 100 Open emitter 2SD635 VCEO VALUE Open collector 5 V 7 A 0.7 A 40 W IC Collector current IB Base current PC Collector dissipation Tj Junction temperature 150 Tstg Storage temperature -50~150 TC=25 SavantIC Semiconductor Product Specification 2SD633 2SD635 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SD633 MIN TYP. MAX UNIT 100 IC=50mA; IB=0 V 60 2SD635 VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=6mA 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=7A; IB=14mA 2.0 V Base-emitter saturation voltage IC=3A; IB=6mA 2.5 V 100 µA 3.0 mA VBEsat ICBO Collector cut-off current 2SD633 2SD635 VCB=100V; IE=0 VCB=60V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=3A ; VCE=3V 2000 hFE-2 DC current gain IC=7A ; VCE=3V 1000 15000 Switching times ton Turn-on time ts Storage time tf Fall time IB1=-IB2=6mA VCC=45V;RL=15A 2 0.8 µs 3.0 µs 2.5 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 2SD633 2SD635