Inchange Semiconductor Product Specification 2SB1023 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・Complement to type 2SD1413 APPLICATIONS ・Power amplifier and switching applications ・Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector -emitter voltage Open base -40 V VEBO Emitter-base voltage Open collector -5 V -3 A -0.5 A 20 W IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB1023 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-4mA -1.5 V VBEsat Base-emitter saturation voltage IC=-2A ;IB=-4mA -2.0 V ICBO Collector cut-off current VCB=-60V; IE=0 -20 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -2.5 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 2000 hFE-2 DC current gain IC=-3A ; VCE=-2V 1000 -40 UNIT V Switching times ton Turn-on time tstg Storage time tf IB1=-IB2=-6mA VCC=-30V ,RL=10Ω Fall time 2 0.30 μs 0.60 μs 0.25 μs Inchange Semiconductor Product Specification 2SB1023 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3