Inchange Semiconductor Product Specification 2SD821 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3 package ・High voltage ,high speed ・Low collector saturation voltage APPLICATIONS ・For color TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 1500 V Collector-emitter voltage Open base 600 V Emitter-base voltage Open collector 5 V IC Collector current 6 A IE Emitter current -6 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD821 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 VCEsat Collector-emitter saturation voltage IC=5 A;IB=1 A VBEsat Base-emitter saturation voltage ICBO MIN TYP. MAX 600 UNIT V 5.0 V IC=5 A;IB=1 A 1.5 V Collector cut-off current VCB=500V;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE DC current gain IC=1A ; VCE=5V COB fT tf 3.0 8 20 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Output capacitance IE=0; VCB=10V;f=1MHz Transition frequency IC=0.1A ; VCE=10V Fall time ICP=5A ;IB1=1A 2 165 pF 3 MHz 0.5 1.0 μs Inchange Semiconductor Product Specification 2SD821 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions 3