Inchange Semiconductor Product Specification 2SD1883 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High breakdown voltage ・High reliability. ・High speed APPLICATIONS ・Color TV horizontal deflection output. ・Color display horizontal deflection output. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Maximum absolute ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 1500 V Collector-emitter voltage Open base 800 V Emitter-base voltage Open collector 6 V IC Collector current 4 A ICM Collector current-peak 12 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1883 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat MAX UNIT IC=2.5A;IB=0.8 A 5.0 V Base-emitter saturation voltage IC=2.5A;IB=0.8 A 1.5 V Collector-emitter sustaining voltage IC=100mA;IB=0 IEBO Emitter cut-off current VEB=4V; IC=0 1.0 mA ICBO Collector cut-off current VCB=800V; IE=0 10 μA ICES Collector cut-off current VCE=1500V; RBE=0 1.0 mA R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH μs VCEO(SUS) hFE-1 hFE-2 tf CONDITIONS MIN 800 DC current gain IC=0.5 A ; VCE=5V 8 DC current gain IC=2.5A ; VCE=5V 3.5 Fall time IC=3A;RL=66.7Ω; IB1=0.8A IB2=-1.6A;VCC=200V 2 TYP. V 7 0.1 0.3 Inchange Semiconductor Product Specification 2SD1883 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SD1883 Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 4