Inchange Semiconductor Product Specification 2SA1887 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Low collector saturation voltage APPLICATIONS ・High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter 导体 半 电 Absolute maximum ratings (Ta=25℃) SYMBOL 固 PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO IC CONDITIONS Open base Open collector Collector current TC=25℃ PC UNIT -80 V -50 V -7 V -10 A C U D ON IC M E ES G N A INCH Emitter-base voltage Open emitter TOR VALUE 25 Collector dissipation W Ta=25℃ 2.0 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SA1887 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.25A -0.2 -0.4 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.25A -0.95 -1.4 V ICBO Collector cut-off current VCB=-70V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-7V; IC=0 -1.0 μA hFE DC current gain IC=-1A ; VCE=-1V COB Output capacitance IE=0; VCB=-10V;f=1MHz 215 pF fT Transition frequency IC=-1A ; VCE=-1V 45 MHz 导体 半 电 固 MIN N A H INC 2 MAX -50 UNIT V 120 400 R O T UC D N O IC M E S GE TYP. Inchange Semiconductor Product Specification 2SA1887 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3