1000V 15A APT15DQ100B APT15DQ100BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE (B) TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular TO-247 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • Low Leakage Current • Increased System Power Density • PFC • Avalanche Energy Rated -2 4 7 1 2 2 1 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT15DQ100B(G) UNIT 1000 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 126°C, Duty Cycle = 0.5) 15 RMS Forward Current (Square wave, 50% duty) 29 IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) 80 EAVL Avalanche Energy (1A, 40mH) 20 IF(RMS) TJ,TSTG TL Amps mJ -55 to 175 Operating and StorageTemperature Range °C 300 Lead Temperature for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 15A 2.5 3.0 IF = 30A 3.06 IF = 15A, TJ = 125°C 1.92 Volts VR = 1000V 100 VR = 1000V, TJ = 125°C 500 Microsemi Website - http://www.microsemi.com 12 UNIT µA pF 7-2006 VF Characteristic / Test Conditions 053-4225 Rev B Symbol APT15DQ100B(G) DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C Reverse Recovery Time Qrr Reverse Recovery Charge IF = 15A, diF/dt = -200A/µs VR = 667V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 667V, TC = 25°C Maximum Reverse Recovery Current trr IRRM IF = 15A, diF/dt = -200A/µs IF = 15A, diF/dt = -1000A/µs VR = 667V, TC = 125°C Maximum Reverse Recovery Current MIN TYP MAX UNIT - 20 - 235 - 185 - 3 - 300 ns - 810 nC - 6 - 125 ns - 1150 nC - 19 Amps MIN TYP ns nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC WT Torque Characteristic / Test Conditions MAX UNIT 1.18 °C/W Junction-to-Case Thermal Resistance Package Weight 0.22 oz 5.9 g Maximum Mounting Torque 10 lb•in 1.1 N•m Microsemi reserves the right to change, without notice, the specifications and information contained herein. D = 0.9 1.00 0.7 0.60 0.5 0.40 0.3 Note: PDM 0.80 0.20 0 t 0.1 0.05 10 -5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 7-2006 TJ (°C) 053-4225 Rev B t1 t2 TC (°C) 0.676 0.504 Dissipated Power (Watts) 0.00147 0.0440 ZEXT Z JC, THERMAL IMPEDANCE (°C/W) θ 1.20 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL 400 40 350 35 30 TJ = 175°C 25 20 TJ = 125°C 15 TJ = 25°C 10 TJ = -55°C 5 0 0 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) 2000 T = 125°C J V = 667V 1800 R 1600 30A 1400 1200 1000 15A 800 600 7.5A 400 200 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change trr 15A 250 200 7.5A 150 100 25 T = 125°C J V = 667V R 30A 20 15 15A 10 7.5A 5 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 35 Duty cycle = 0.5 T = 175°C J 30 25 Qrr 0.2 0.0 300 0 IRRM 0.6 0.4 R 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change trr 0.8 T = 125°C J V = 667V 30A 0 Qrr 1.0 APT15DQ100B(G) 50 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 1.2 trr, REVERSE RECOVERY TIME (ns) 45 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) TYPICAL PERFORMANCE CURVES 20 15 10 5 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 70 60 50 40 7-2006 30 20 10 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-4225 Rev B CJ, JUNCTION CAPACITANCE (pF) 80 APT15DQ100B(G) Vr diF /dt Adjust +18V APT10035LLL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Cathode 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 053-4225 Rev B 7-2006 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) Anode 2.21 (.087) 2.59 (.102) Cathode 10.90 (.430) BSC Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 0.25 IRRM