1 3 TO-220 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 APT15S20KCT(G) 1 200V 2X25A *G Denotes RoHS Compliant, Pb Free Terminal Finish. 3 2 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular TO-220 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • High Blocking Voltage • Increased System Power • • • • • -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) 48 Volt Output Rectifiers High Speed Rectifiers • Low Leakage Current All Ratings Are Per Leg: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VR Characteristic / Test Conditions Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 122°C, Duty Cycle = 0.5) IFSM TJ,TSTG APT15S20KCT(G) UNIT 200 Volts Maximum D.C. Reverse Voltage VRRM IF(RMS) Density 25 RMS Forward Current (Square wave, 50% duty) 63 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) 110 Amps -55 to 150 Operating and StorageTemperature Range TL Lead Temperature for 10 Sec. 300 EVAL Avalanche Energy (2A, 8mH) 15 °C mJ STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V TYP MAX IF = 15A .80 .83 IF = 30A .91 IF = 15A, TJ = 125°C .67 VR = VR Rated Microsemi Website - http://www.microsemi.com Volts .250 VR = VR Rated, TJ = 125°C 5.0 75 UNIT mA pF 11-2008 VF MIN 053-6037 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Time Qrr Reverse Recovery Charge 80 - 210 - 5 - 100 ns - 440 nC - 8 - 55 - 580 - 18 MIN TYP VR = 133V, TC = 25°C IF = 15A, diF/dt = -200A/μs VR = 133V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM - Maximum Reverse Recovery Current trr IRRM TYP IF = 15A, diF/dt = -200A/μs IF = 15A, diF/dt = -700A/μs Maximum Reverse Recovery Current VR = 133V, TC = 125°C MAX UNIT MIN ns nC - - Amps Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MAX RθJC Junction-to-Case Thermal Resistance 1.1 RθJA Junction-to-Ambient Thermal Resistance 80 WT Torque Package Weight oz 1.9 g 10 lb•in 1.1 N•m Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.7 0.6 0.5 Note: 0.4 0.3 0.2 0.1 0.05 0 10-5 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 1.2 0.8 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL 11-2008 Junction temp (°C) 053-6037 Rev C t1 t2 SINGLE PULSE 0.241 °C/W 0.000249 J/°C 0.858 °C/W 0.000678 J/°C Power (watts) Case temperature (°C) FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL °C/W 0.07 Maximum Mounting Torque 1.0 UNIT TYPICAL PERFORMANCE CURVE APT15S20KCT(G) 140 60 TJ = 150°C 50 IF, FORWARD CURRENT (A) trr, REVERSE RECOVERY TIME (ns) TJ = -55°C TJ = 25°C 40 TJ = 125°C 30 20 10 0 0.2 0.4 0.6 0.8 1 1.2 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 1000 IRRM, REVERSE RECOVERY CURRENT (A) R 30A 800 600 15A 400 7.5A 200 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 60 40 20 0 1.2 Qrr 1.0 IRRM 30A R 20 15 10 7.5A 5 15A 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 0 200 70 trr Duty cycle = 0.5 T =150°C J 60 Qrr 50 0.8 trr 0.6 T =125°C J V =133V 0 0.4 IF(AV) (A) Qrr, REVERSE RECOVERY CHARGE (nC) 7.5A 80 25 T =125°C J V =133V 0 Kf, DYNAMIC PARAMETERS (Normalized to 700A/μs) 15A 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE(A/μs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 1200 40 30 20 0.2 0.0 30A R 100 0 0 T =125°C J V =133V 120 10 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 800 600 11-2008 400 200 0 .6 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-6037 Rev C CJ, JUNCTION CAPACITANCE (pF) 1000 APT15S20KCT(G) Vr diF /dt Adjust +18V APT20M36BLL 0V D.U.T. 30μH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions TO-220 Package Outline 053-6037 Rev C 11-2008 e3 100% Sn Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.