isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= -5A ·Low Collector Saturation Voltage : VCE(sat)= -2.0V(Max.)@ IC= -5.0A = -3.0V(Max.)@ IC= -10A ·Complement to Type BDW43 APPLICATIONS ·Designed for general purpose and low speed switching applications n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s .i PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w w VALUE UNIT -120 V -120 V -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous -0.5 A PC Collector Power Dissipation @ TC=25℃ 85 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.47 ℃/W BDW48 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDW48 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -10mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -50mA -3.0 V VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -4V -3.0 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -1.0 mA ICEO Collector Cutoff Current VCE= -60V; IB= 0 -2.0 mA IEBO Emitter Cutoff Current -2.0 mA hFE-1 DC Current Gain hFE-2 DC Current Gain fT COB B w Output Capacitance isc Website：www.iscsemi.cn n c . i m e B s c s .i ww Current-Gain—Bandwidth Product -120 UNIT VEB= -5V; IC= 0 IC= -5A ; VCE= -4V 1000 IC= -10A ; VCE= -4V 250 IC= -3A; VCE= -3V; ftest= 1MHz IE= 0; VCB= -10V; ftest= 0.1MHz 2 V 4 MHz 300 pF