isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -2.0V(Max)@ IC= -3A ·Complement to Type 2N6386 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -15 A IB Base Current-DC -250 mA PC Collector Power Dissipation TC=25℃ Collector Power Dissipation Ta=25℃ B Tj Tstg Junction Temperature Storage Temperature Range 65 W 2 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.92 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn 2N6666 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2N6666 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -0.2A, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A ,IB= -6mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation voltage IC= -8A ,IB= -80mA -3.0 V VBE(on)-1 Base-Emitter On Voltage IC= -3.0A ; VCE= -3V -2.8 V VBE(on)-2 Base-Emitter On Voltage IC= -8.0A ; VCE= -3V -4.5 V ICEX Collector Cutoff Current VCEV= 40V;VBE(off)=1.5V VCEV= 40V;VBE(off)=1.5V;TC=125℃ 0.3 3.0 mA ICEO Collector Cutoff Current VCE= -40V, IB= 0 1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 5 mA hFE-1 DC Current Gain IC= -3.0A ; VCE= -3V 1000 hFE-2 DC Current Gain IC= -8.0A ; VCE= -3V 100 COB Output Capacitance IE= 0; VCB= -10V,ftest= 1MHz 200 pF isc Website：www.iscsemi.cn CONDITIONS B MIN TYP. MAX -40 UNIT V