isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0V(Max)@ IC= 3A = 2.5V(Max)@ IC= 8A ·Complement to Type TIP105 APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current- Continuous 1 A PC Collector Power Dissipation @TC=25℃ Collector Power Dissipation @Ta=25℃ B Tj Tstg Junction Temperature Storage Temperature Range 80 W 2 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn TIP100 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor TIP100 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A, IB= 80mA 2.5 V VBE(on) Base-Emitter On Voltage IC= 8A; VCE= 4V 2.8 V ICBO Collector Cutoff Current VCB= 60V, IE= 0 50 μA ICEO Collector Cutoff Current VCE= 30V, IB= 0 50 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 8 mA hFE-1 DC Current Gain IC= 3A; VCE= 4V 1000 hFE-2 DC Current Gain IC= 8A; VCE= 4V 200 COB Output Capacitance IE= 0; VCB= 10V,f= 0.1MHz isc Website：www.iscsemi.cn CONDITIONS MIN MAX 60 B B UNIT V 20000 200 pF