isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU326A DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max.) @ IC= 2.5A APPLICATIONS ·Designed for use in operating in color TV receivers chopper supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 75 W TJ Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 2.33 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU326A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0; L= 25mH VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1.25A 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.4 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 4A; IB= 1.25A 1.6 V ICES Collector Cutoff Current VCE= 900V; VBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 10 mA hFE DC Current Gain IC= 1A; VCE= 5V Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V, f= 1.0MHz fT CONDITIONS MIN TYP. MAX 400 UNIT V B B 25 4 MHz Switching Times ton Turn-On Time tstg Storage Time tf IC= 2.5A; IB1= 0.5A; IB2= -1A; VCC= 250V Fall Time isc Website：www.iscsemi.cn 2 0.5 μs 3.5 μs 0.5 μs