isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU926 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) ·Low Saturation Voltage : VCE(sat)= 1.5V (Max)@IC= 5A APPLICATIONS ·Designed for use in high-voltage , high-speed , power switching in inductive circuit. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Base-Emitter Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 10 A IB Base Current- Continuous 2 A PC Collector Power Dissipation @ TC=25℃ 120 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.04 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU926 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2A 5.0 V Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.6 V ICEX Collector Cutoff Current VCE= 850V; VBE= -2.5V 0.5 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V; ftest= 1MHz VBE(sat) fT CONDITIONS MIN TYP. MAX 400 UNIT V B B B 4 MHz Switching Times ton Turn-On Time tstg Storage Time tf IC= 5A ;IB1= -IB2= 1A; VCC= 250V Fall Time isc Website：www.iscsemi.cn 2 1.0 μs 3.2 μs 0.8 μs