isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX42 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 1.2V (Max.)@IC= 4A ·Fast Switching Speed APPLICATIONS ·Designed for use in switching and linear applications in military and industrial equipment. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 250 V VCEX Collector-Emitter Voltage VBE= -1.5V 300 V VCBO Collector-Base Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 2.4 A PC Collector Power Dissipation @TC=25℃ 120 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.46 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX42 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; IB= 0 250 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A ;IB= 0.75A 1.6 V Base-Emitter Saturation Voltage IC= 6A ;IB= 0.75A 2.0 V ICEO Collector Cutoff Current VCE= 200V; IB= 0 1.0 mA ICEX Collector Cutoff Current VCE= 300V;VBE= -1.5V VCE= 300V;VBE= -1.5V;TC=125℃ 1.0 5.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1 mA hFE-1 DC Current Gain IC= 4A ; VCE= 4V 15 hFE-2 DC Current Gain IC= 6A ; VCE= 4V 8 Current-Gain—Bandwidth Product IC= 1A;VCE= 15V, ftest= 10MHz 8 VBE(sat) fT CONDITIONS MIN TYP. B MAX UNIT 45 MHz Switching Times ton Turn-on Time ts Storage Time tf Fall Time IC= 6A ;IB1= 0.75A; VCC= 150V 0.23 1.0 μs 1.5 2.0 μs 0.2 1.2 μs IC= 6A ;IB1=-IB2= 0.75A; VCC= 150V isc Website：www.iscsemi.cn