isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU999 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 140V(Min) ·High Switching Speed ·High Power Dissipation APPLICATIONS ·Designed for switching and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 25 A ICP Collector Current-Pulse 40 A IB Base Current-Continuous 10 A PC Collector Power Dissipation @ TC=25℃ 106 W TJ Junction Temperature 200 ℃ -55~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.08 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU999 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 0.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 2.5A 1.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 10A; IB= 1A 1.8 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 25A; IB= 2.5A 2.5 V Base -Emitter On Voltage IC= 10A; VCE= 2V 1.8 V ICEX Collector Cutoff Current VCE= 140V; VBE= -1.5V 10 μA ICBO Collector Cutoff Current VCB= 160V; IE= 0 100 μA ICEO Collector Cutoff Current VCE= 70V; IB= 0 50 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 100 μA hFE-1 DC Current Gain IC= 0.5A; VCE= 2V 35 hFE-2 DC Current Gain IC= 10A; VCE= 2V 25 hFE-3 DC Current Gain IC= 25A; VCE= 2V 12 VBE(on) 140 UNIT B V 100 Switching times ton Turn-on Time tstg Storage Time tf IC= 10A, IB1= -IB2= 1A, VCC= 80V Fall Time isc Website：www.iscsemi.cn 2 0.3 μs 1.5 μs 0.25 μs