isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2527AX DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 12 A ICM Collector Current-Peak 30 A IB Base Current- Continuous 8 A IBM Base Current-Peak 12 A PC Collector Power Dissipation @ TC=25℃ 45 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.8 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2527AX ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.3 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃ 0.25 2.0 mA IEBO Emitter Cutoff Current VEB= 7.5V; IC= 0 0.25 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 6 21 hFE-2 DC Current Gain IC= 6A; VCE= 5V 5 9 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz B B 145 pF Switching times tstg tf Storage Time 2.0 μs 0.2 μs IC= 6A , IB(end)= 0.55A; LB= 0.6μH -VBB= 2V; (-dIB/dt= 3.33A/μs) Fall Time isc Website：www.iscsemi.cn 2