isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX99 DESCRIPTION ·High Collector Current-IC= 1.5A ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 300V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in fast switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 730 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 12 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3 A IB Base Current-Continuous 0.75 A IBM Base Current-Peak 1.5 A IE Emitter Current-Continuous 2.25 A IEM Emitter Current-Peak 4.5 A PC Collector Power Dissipation @ TC=25℃ 28 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX99 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ; IB= 0; L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 0.2A; IB= 20mA 2 V VBE(sat) Base-Emitter Saturation Voltage IC= 0.2A; IB= 20mA 1 V ICES Collector Cutoff Current VCE= 400V;VBE= 0 5 μA ICEX Collector Cutoff Current VCE= 730V;VBE= -1.5V VCE= 730V;VBE= -1.5V;TJ=100℃ 50 250 μA IEBO Emitter Cutoff Current VEB= 12V; IC= 0 1 mA hFE-1 DC Current Gain IC= 10mA ; VCE= 2V 10 hFE-2 DC Current Gain IC= 50mA ; VCE= 5V 16 Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V 4 MHz Output Capacitance IE= 0; VCB= 10V,ftest= 1MHz 12 pF fT COB CONDITIONS MIN TYP. MAX 300 UNIT V 42 Switching times tstg tf Storage Time 2 μs 0.8 μs IC= 1A ,VCC= 250V, IB1= 20mA; IB2= -40mA Fall Time isc Website：www.iscsemi.cn 2