ISC BU911

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BU911
DESCRIPTION
·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min)
APPLICATIONS
·Solenoid/ relay drivers
·Motor control
·Electronic automotive ignition
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage VBE= 0
450
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
6
A
ICM
Collector Current-peak
10
A
IB
Base Current
1
A
PC
Collector Power Dissipation
@TC=25℃
60
W
Tj
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.08
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BU911
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.1A; IB= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 2.5A; IB= 50mA
1.8
V
V CE(sat)-2
Collector-Emitter Saturation Voltage
IC= 4A; IB= 200mA
1.8
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 2.5A; IB= 50mA
2.2
V
V BE(sat)-2
Base-Emitter Saturation Voltage
IC= 4A; IB= 200mA
2.5
V
ICES
Collector Cutoff Current
VCE= 450V;VBE= 0
VCE= 450V;VBE= 0;Tj= 125℃
1.0
5.0
mA
ICEO
Collector Cutoff Current
VCE= 400V; IB= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
5.0
mA
VECF
C-E Diode Forward Voltage
IF= 4A
2.5
V
isc Website:www.iscsemi.cn
CONDITIONS
B
B
MIN
TYP.
MAX
400
UNIT
V