isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU323A DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min.) ·DARLINGTON ·High Reliability APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current- Continuous 10 A ICM Collector Current-Peak 16 A IB Base Current 3 A PC Collector Power Dissipation @TC=25℃ 175 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU323A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 10mH VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6 A; IB= 120mA 1.7 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 10 A; IB= 300mA 2.7 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 6 A; IB= 120mA 2.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10 A; IB= 300mA 3.0 V VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 6V 2.5 V ICER Collector Cutoff Current VCER= RatedVCER;RBE= 100Ω 1.0 mA ICBO Collector Cutoff Current VCB= RatedVCBO; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 40 mA hFE-1 DC Current Gain IC= 3A ; VCE= 6V 300 hFE-2 DC Current Gain IC= 6A ; VCE= 6V 150 hFE-3 DC Current Gain IC= 10A ; VCE= 6V 50 VECF C-E Diode Forward Voltage IF= 10A COB Output Capacitance IE= 0; VCB= 10V; f= 100kHz 400 UNIT V B B B 2000 3.5 165 V pF Switching Times ts Storage Time tf Fall Time 15 μs 15 μs VCC= 12V; IC= 6A, IB1= -IB2= 0.3A isc Website：www.iscsemi.cn