isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDW52/A/B/C DESCRIPTION ·Collector Current -IC= -15A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -45V(Min)- BDW52; -60V(Min)- BDW52A -80V(Min)- BDW52B; -100V(Min)- BDW52C ·Complement to Type BDW51/A/B/C APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage VALUE BDW52 -45 BDW52A -60 n c . i m e V s c s i . w BDW52B -80 BDW52C -100 w w Collector-Emitter Voltage UNIT BDW52 -45 BDW52A -60 BDW52B -80 BDW52C -100 V Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak -20 A IB Base Current -7 A PC Collector Power Dissipation @ TC=25℃ 125 W TJ Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.4 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDW52/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BDW52 VCEO(SUS) MAX UNIT -45 BDW52A Collector-Emitter Sustaining Voltage TYP. -60 IC= -100mA; IB= 0 V BDW52B -80 BDW52C -100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -2.5A -3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB=- 2.5A -2.5 V VBE(on) Base-Emitter On Voltage IC= -5A; VCE= -4V -1.5 V B m e s isc BDW52 ICBO ICEO . w w Collector Cutoff Current w Collector Cutoff Current BDW52A BDW52B BDW52C n c . i VCB= -45V; IE= 0 VCB= -45V; IE= 0; TC= 150℃ -0.5 -5.0 VCB= -60V; IE= 0 VCB= -60V; IE= 0; TC= 150℃ -0.5 -5.0 VCB= -80V; IE= 0 VCB= -80V; IE= 0; TC= 150℃ -0.5 -5.0 VCB= -100V; IE= 0 VCB= -100V; IE= 0; TC= 150℃ -0.5 -5.0 BDW52 VCE= -22V; IB= 0 BDW52A VCE= -30V; IB= 0 BDW52B VCE= -40V; IB= 0 BDW52C VCE= -50V; IB= 0 B B mA -2.0 mA B Emitter Cutoff Current VEB= -5V; IC=0 hFE-1 DC Current Gain IC= -5A; VCE= -4V 20 hFE-2 DC Current Gain IC= -10A; VCE= -4V 5 Current Gain-Bandwidth Product IC= -0.5A; VCE= -4V 3 isc Website：www.iscsemi.cn -1.0 B IEBO fT mA 2 150 MHz