isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC681 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 70V (Min) ·Low Collector Saturation Voltage: VCE(sat)= 2.0V(Max.)@ IC= 5A APPLICATIONS ·Designed for use in B/W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 2 A PC Collector Power Dissipation @TC=25℃ 50 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC681 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.6A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.6A 1.5 V ICBO Collector Cutoff Current VCB= 200V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 mA Fall Time IC= 5A; VCC= 25V 0.5 μs tf isc Website：www.iscsemi.cn CONDITIONS B B MIN TYP. MAX 70 UNIT V