isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUP22B/C DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min)-BUP22B = 450V(Min)-BUP22C ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switchingregulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO PARAMETER Collector- Emitter Voltage VBE=0 VALUE BUP22B 750 BUP22C 850 BUP22B 400 BUP22C 450 UNIT V Collector-Emitter Voltage V Emitter-Base Voltage 9 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 4 A IBM Base Current-Peak 6 A PC Collector Power Dissipation @ TC=25℃ 125 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.0 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUP22B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUP22B VCEO(SUS) Collector-Emitter Sustaining Voltage MAX IC= 0.1A ;IB= 0; L=25 mH UNIT V B BUP22B VBE(sat) TYP. 400 BUP22C VCE(sat) MIN 450 IC= 6A; IB= 0.8A 1.5 B Collector-Emitter Saturation Voltage V BUP22C IC= 6A; IB= 1A 1.5 BUP22B IC= 6A; IB= 0.8A 1.5 B B Base-Emitter Saturation Voltage V BUP22C IC= 6A; IB= 1A 1.5 B ICES Collector Cutoff Current VCE= VCESmax;VBE= 0 VCE= VCESmax;VBE= 0; TJ= 125℃ 1 2 mA IEBO Emitter Cutoff Current VEB= 9V; IC=0 10 mA hFE DC Current Gain IC= 1A; VCE= 5V 25 Switching Times; Resistive Load ton Turn-On Time 0.5 μs 3.0 μs 0.3 μs For BUP22B IC= 6A; IB1= -IB2= 0.8A ts Storage Time For BUP22C IC= 6A; IB1= -IB2= 1A tf Fall Time isc Website：www.iscsemi.cn 2