isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors D44T3/4 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 300V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE=0 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A IB Base Current-Continuous 0.5 A PC Collector Power Dissipation @ TC=25℃ 31.2 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 4 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors D44T3/4 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) MAX UNIT IC= 0.5A; IB= 50mA 1.0 V Base-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.2 V ICES Collector Cutoff Current VCE= 400V; VBE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain D44T3 hFE-2 30 90 D44T4 75 175 D44T3 20 DC Current Gain IC= 50mA ; VCE= 10V fT Current-Gain—Bandwidth Product tr Rise Time tf TYP. IC= 0.5A ; VCE= 10V D44T4 tstg MIN Storage Time 40 IC= 0.1A ; VCE= 10V; ftest= 1MHz IC= 0.5A; IB1= -IB2= 50mA Fall Time isc Website：www.iscsemi.cn 2 15 MHz 0.3 μs 3.0 μs 0.7 μs