isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N3715/3716 DESCRIPTION ·DC Current Gain: hFE= 50-150@IC= 1A ·Wide Area of Safe Operation ·Low Collector Saturation Voltage: VCE(sat)= 0.8V(Max.)@ IC= 5A ·Complement to Type 2N3791/3792 APPLICATIONS ·Designed for medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO PARAMETER VALUE 2N3715 80 2N3716 100 2N3715 60 Collector-Base Voltage V Collector-Emitter Voltage V 2N3716 VEBO UNIT 80 Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current 4 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ MAX UNIT 1.17 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N3715/3716 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N3715 VCEO(SUS) Collector-Emitter Sustaining Voltage MIN TYP. MAX UNIT 60 IC= 200mA ; IB= 0 2N3716 V 80 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.5 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 2V 1.5 V 2N3715 VCE= 80V; VBE(off)= -1.5V VCE= 60V; VBE(off)= -1.5V, TC=150℃ 1.0 10 2N3716 VCE= 100V; VBE(off)= -1.5V VCE= 80V; VBE(off)= -1.5V, TC=150℃ 1.0 10 5.0 ICEX Collector Cutoff Current mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 2V 50 hFE-2 DC Current Gain IC= 3A ; VCE= 2V 30 Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V ;ftest= 1.0MHz 4 fT mA 150 MHz Switching Times tr tstg tf Rise Time Storage Time IC= 5A; IB1= -IB2= 0.5A Fall Time isc Website：www.iscsemi.cn 2 0.45 μs 0.3 μs 0.4 μs